ELECTRICAL PROPERTIES OF GLASSY AS₂TE₃BRASEN D.1972; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1972; VOL. 11; NO 2; PP. 131-136; BIBL. 8 REF.Serial Issue

ON THE PHOTOCONDUCTIVITY OF AMORPHOUS CHALCOGENIDE SEMICONDUCTORSHALPERN V.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 37; NO 4; PP. 423-434; BIBL. 20 REF.Article

TRANSPORT AND RECOMBINATION PROPERTIES OF AMORPHOUS ARSENIC TELLURIDE.MOUSTAKAS TD; WEISER K.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2448-2454; BIBL. 38 REF.Article

PHASE TRANSITIONS AND ELECTRICAL PROPERTIES OF AS₂TE₃.PLATAKIS NS.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 24; NO 3; PP. 365-376; BIBL. 35 REF.Article

DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE AS₂S₃, AS₂SE₃, AND AS₂TE₃: X-RAY PHOTOEMISSION AND THEORY.BISHOP SG; SHEVCHIK NJ.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 1567-1578; BIBL. 45 REF.Article

CONTRIBUTION A L'ETUDE DE L'IRRADIATION DE SEMICONDUCTEURS AMORPHES PAR DES IONS LOURDSBENMALEK MOHAMED.1978; ; FRA; DA. 1978; 7736; 163 P.; 29 CM; BIBL. 146 REF.; TH.: SCI./LYON 1/1977; LYCEN 7758Thesis

THE MOBILITY OF PHOTO-INDUCED CARRIERS IN DISORDERED AS₂TE₃ AND AS₃₀TE₄₈SI₁₂GE₁₀.MARSHALL JM; OWEN AE.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 31; NO 6; PP. 1341-1356; BIBL. 17 REF.Article

ELECTRONS IN GLASS.MOTT NF.1977; CONTEMPOR. PHYS.; G.B.; DA. 1977; VOL. 18; NO 3; PP. 225-245; BIBL. 1 P. 1/2Article

PHASE DIAGRAM AND OUT-OF-EQUILIBRIUM PROPERTIES OF MELTS IN THE AS-TE SYSTEMCORNET J; ROSSIER D.1973; MATER. RES. BULL.; U.S.A.; DA. 1973; VOL. 8; NO 1; PP. 9-20; BIBL. 17 REF.Serial Issue

TEMPERATURE DEPENDENCE OF A.C. CONDUCTIVITY OF CHALCOGENIDE GLASSESELLIOTT SR.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 37; NO 5; PP. 553-560; BIBL. 19 REF.Article

THE DENSITY OF STATES AT THE FERMI LEVEL OF THE NON-CRYSTALLINE SEMICONDUCTORS.KOCKA J.1976; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1976; VOL. 26; NO 7; PP. 807-811; BIBL. 18 REF.Article

CHARGE SCREENING LENGTH IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORSMARSHALL JM.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 38; NO 4; PP. 407-417; BIBL. 12 REF.Article

LOCALIZED GAP STATES IN AMORPHOUS SEMICONDUCTING COMPOUNDS.HAUSER JJ; DISALVO FJ JR; HUTTON RS et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 6; PP. 1557-1575; BIBL. 22 REF.Article

ELECTRONIC STRUCTURE OF ARSENIC CHALCOGENIDES.BULLETT DW.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 4; PP. 1683-1692; BIBL. 38 REF.Article

CHARACTERIZATION OF LIGHT EMISSION FROM AMORPHOUS CHALCOGENIDE SWITCHESWALSH PJ; POOLADDEJ D; THOMPSON MJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 733-734; BIBL. 8 REF.Article

A SURVEY OF THE ELASTIC PROPERTIES OF SOME SEMICONDUCTING GLASSES UNDER PRESSURE.THOMPSON JC; BAILEY KE.1978; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1978; VOL. 27; NO 2; PP. 161-172; BIBL. 29 REF.Article

DEGRADATION KINETICS AND DIFFUSION PROFILES OF GOLD ELECTRODES IN AMORPHOUS AS₅₀TE₅₀ FILMS.MACKOWSKI JM; MARSAUD S; TOUSSET J et al.1975; LYCEN-7581; FR.; DA. 1975; PP. 1-5; BIBL. 19 REF.; (INT. CONF. AMORPHOUS LIQUID SEMICONDUCTORS. 6; LENINGRAD; 1975)Conference Proceedings

CONDUCTION MECHANISMS IN AMORPHOUS AND DISORDERED SEMICONDUCTORS EXPLAINED BY A MODEL OF MEDIUM-RANGE DISORDER OF COMPOSITIONPISTOULET B; ROBERT JL; DUSSEAU JM et al.1978; J. NON CRYST. SOLIDS; NLD; DA. 1978; VOL. 29; NO 1; PP. 29-40; BIBL. 28 REF.Article

CAPACITE THERMIQUE DES COMPOSES AS₂S₃, AS₂SE₃ ET AS₂TE₃ A L'ETAT VITREUX ENTRE 300 ET 600 KORLOVA GM; MUROMTSEV VA.1979; FIZ. KHIM. STEKLA; SUN; DA. 1979; VOL. 5; NO 3; PP. 361-366; BIBL. 10 REF.Article

Glass formation in the As₂Se₃-As₂Te₃-Sb₂Te₃ systemHRISTOVA-VASILEVA, T; VASSILEV, V; ALJIHMANI, L et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 10, pp 2540-2543, issn 0022-3697, 4 p.Article